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Single‐Crystalline Diluted Magnetic Semiconductor GaN:Mn Nanowires
Author(s) -
Choi H.J.,
Seong H.K.,
Chang J.,
Lee K.I.,
Park Y.J.,
Kim J.J.,
Lee S.K.,
He R.,
Kuykendall T.,
Yang P.
Publication year - 2005
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200401706
Subject(s) - materials science , nanowire , curie temperature , magnetic semiconductor , fabrication , semiconductor , optoelectronics , diode , nanotechnology , condensed matter physics , ferromagnetism , medicine , physics , alternative medicine , pathology
Single‐crystalline diluted magnetic semiconductor GaN:Mn nanowires with controlled Mn concentrations have been successfully synthesized and incorporated into devices (see Figure). These nanowires exhibit Curie temperatures above room temperature, magnetoresistances near room temperature, and spin‐dependent transport. The nanowires are used as building blocks for the fabrication of GaN:Mn/n‐SiC based light‐emitting diodes.