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Electrically Rewritable Memory Cells from Poly(3‐hexylthiophene) Schottky Diodes
Author(s) -
Smits J. H. A.,
Meskers S. C. J.,
Janssen R. A. J.,
Marsman A. W.,
de Leeuw D. M.
Publication year - 2005
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200401534
Subject(s) - materials science , polythiophene , optoelectronics , doping , schottky diode , resistive random access memory , diode , plasticizer , non volatile memory , nanotechnology , polymer , conductive polymer , composite material , electrical engineering , voltage , engineering
Rewritable plastic memory cells are made from polythiophene doped with inorganic salts and a plasticizer. The memory can be written and erased at ±6 V (see Figure) and read out is non‐destructive. The retention time at zero bias is on the order of several minutes.