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Low‐Voltage Transistor Employing a High‐Mobility Spin‐Coated Chalcogenide Semiconductor
Author(s) -
Mitzi D. B.,
Copel M.,
Chey S. J.
Publication year - 2005
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200401443
Subject(s) - materials science , thin film transistor , chalcogenide , spin coating , solvent , optoelectronics , semiconductor , transistor , thin film , spin (aerodynamics) , dimethyl sulfoxide , yield (engineering) , explosive material , hydrazine (antidepressant) , chemical engineering , nanotechnology , voltage , organic chemistry , layer (electronics) , chromatography , composite material , chemistry , electrical engineering , engineering , aerospace engineering
In 2 Se 3 thin films are spin‐coated using a hydrazinium‐precursor approach to yield thin‐film transistors (TFTs, see Figure). The highly toxic and explosive solvent hydrazine, previously employed for spin‐coating SnS 2– x Se x films, has also been replaced with a more convenient solvent mixture of ethanolamine and dimethyl sulfoxide. Low‐voltage operation (< 8 V) of TFTs based on spin‐coated In 2 Se 3 yields mobilities as high as 16 cm 2 V –1 s –1 and on/off ratios of 10 6 .
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