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High‐Performance Organic Transistors Using Solution‐Processed Nanoparticle‐Filled High‐ k Polymer Gate Insulators
Author(s) -
Schroeder R.,
Majewski L. A.,
Grell M.
Publication year - 2005
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200401398
Subject(s) - materials science , nanoparticle , polymer , transistor , optoelectronics , homogeneous , matrix (chemical analysis) , voltage , nanotechnology , gate voltage , composite material , electrical engineering , physics , engineering , thermodynamics
A polymer matrix filled with nanoparticles , used as the gate material, makes solution‐processable, low‐voltage, organic transistors possible. The device shown here operates at very low voltages (see Figure). Atomic force microscopy shows a relatively homogeneous film, even with a high filling of nanoparticles.
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