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Controllable Modification of SiC Nanowires Encapsulated in BN Nanotubes
Author(s) -
Li Y.,
Dorozhkin P. S.,
Bando Y.,
Golberg D.
Publication year - 2005
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200401266
Subject(s) - nanowire , materials science , chemical vapor deposition , nanotechnology , tube (container) , chemical engineering , composite material , engineering
Semiconducting β‐SiC nanowires encapsulated in BN nanotubes are prepared using chemical vapor deposition (see Figure). An unusual feature—a gap of 10–15 nm in width between the inner wall of the BN tube and the SiC nanowire—allows various chemical and morphological modifications to be performed on the nanowires.