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A Nanostructured Porous Silicon Near Insulator Becomes Either a p‐ or an n‐Type Semiconductor upon Gas Adsorption
Author(s) -
Garrone E.,
Geobaldo F.,
Rivolo P.,
Amato G.,
Boarino L.,
Chiesa M.,
Giamello E.,
Gobetto R.,
Ugliengo P.,
Viale A.
Publication year - 2005
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200401200
Subject(s) - materials science , semiconductor , porous silicon , adsorption , mesoporous material , insulator (electricity) , silicon , porous medium , silicon on insulator , nanotechnology , electron , molecule , porosity , chemical engineering , optoelectronics , catalysis , chemistry , composite material , organic chemistry , physics , quantum mechanics , engineering
Mesoporous silicon exchanges electrons extensively and reversibly with adsorbed species , e.g., NO 2 and NH 3 . Such an exchange has been reported for systems that maintain their original p or n character. In the present case, a solid, which is a p‐type semiconductor in bulk, converts to a “near insulator” when nanostructured. The near insulator may adopt either a p or an n nature with electron exchange, depending on the type of adsorbed molecule (see Figure).