A Nanostructured Porous Silicon Near Insulator Becomes Either a p‐ or an n‐Type Semiconductor upon Gas Adsorption | Zendy

Garrone E. | Zendy; Geobaldo F. | Zendy; Rivolo P. | Zendy; Amato G. | Zendy; Boarino L. | Zendy; Chiesa M. | Zendy; Giamello E. | Zendy; Gobetto R. | Zendy; Ugliengo P. | Zendy; Viale A. | Zendy

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A Nanostructured Porous Silicon Near Insulator Becomes Either a p‐ or an n‐Type Semiconductor upon Gas Adsorption

Author(s) -

Garrone E.,

Geobaldo F.,

Rivolo P.,

Amato G.,

Boarino L.,

Chiesa M.,

Giamello E.,

Gobetto R.,

Ugliengo P.,

Viale A.

Publication year - 2005

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200401200

Subject(s) - materials science , semiconductor , porous silicon , adsorption , mesoporous material , insulator (electricity) , silicon , porous medium , silicon on insulator , nanotechnology , electron , molecule , porosity , chemical engineering , optoelectronics , catalysis , chemistry , composite material , organic chemistry , physics , quantum mechanics , engineering

Mesoporous silicon exchanges electrons extensively and reversibly with adsorbed species , e.g., NO 2 and NH 3 . Such an exchange has been reported for systems that maintain their original p or n character. In the present case, a solid, which is a p‐type semiconductor in bulk, converts to a “near insulator” when nanostructured. The near insulator may adopt either a p or an n nature with electron exchange, depending on the type of adsorbed molecule (see Figure).

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