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A Zone‐Casting Technique for Device Fabrication of Field‐Effect Transistors Based on Discotic Hexa‐ peri ‐hexabenzocoronene
Author(s) -
Pisula W.,
Me A.,
Stepputat M.,
Lieberwirth I.,
Kolb U.,
Tracz A.,
Sirringhaus H.,
Pakula T.,
Müllen K.
Publication year - 2005
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200401171
Subject(s) - discotic liquid crystal , materials science , fabrication , hexa , transistor , field effect transistor , casting , optoelectronics , charge (physics) , nanotechnology , crystallography , composite material , liquid crystal , electrical engineering , chemistry , medicine , alternative medicine , pathology , voltage , engineering , physics , quantum mechanics
Field‐effect transistors with highly ordered active layers are fabricated by zone‐casting discotic dodecyl‐substituted hexa‐ peri ‐hexabenzocoronene molecules onto hydrophobic substrates to form semiconducting columnar structures (see Figure). The discs form columns that possess long‐range order on the scale of square centimeters, and the devices show order‐of‐magnitude improvements in charge‐carrier mobilities over previously reported devices.