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Hall and Field‐Effect Mobilities of Electrons Accumulated at a Lattice‐Matched ZnO/ScAlMgO 4 Heterointerface
Author(s) -
Suzuki T. I.,
Ohtomo A.,
Tsukazaki A.,
Sato F.,
Nishii J.,
Ohno H.,
Kawasaki M.
Publication year - 2004
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200401018
Subject(s) - condensed matter physics , materials science , lattice (music) , dielectric , crystallite , grain boundary , electric field , electron , hall effect , optoelectronics , physics , electrical resistivity and conductivity , quantum mechanics , microstructure , acoustics , metallurgy
At a lattice‐matched ZnO/ScAlMgO 4 heterointerface , Hall and field‐effect mobilities of grain‐boundary‐free ZnO channels have been simultaneously characterized under a gate electric field ( E G ) applied through a ScAlMgO 4 dielectric gate. The field‐effect mobility increased linearly with increasing E G (see Figure), clearly in contrast to the supralinear (exponential) dependence that has been previously reported for polycrystalline channels.