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Enhanced Ferroelectric Properties of Nitrogen‐Doped Bi 4 Ti 3 O 12 Thin Films
Author(s) -
Irie H.,
Saito H.,
Ohkoshi S.,
Hashimoto K.
Publication year - 2005
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200400957
Subject(s) - materials science , ferroelectricity , nitrogen , coercivity , doping , thin film , polarization (electrochemistry) , bit (key) , sputter deposition , sputtering , optoelectronics , oxygen , analytical chemistry (journal) , condensed matter physics , nanotechnology , dielectric , chemistry , computer science , physics , computer security , organic chemistry , chromatography , quantum mechanics
Ferroelectric nitrogen‐doped Bi 4 Ti 3 O 12 (BIT) and nitrogen‐substituted BIT (N‐BIT) thin films are prepared by an radiofrequency‐magnetron‐sputtering method such that nitrogen atoms are incorporated into oxygen sites. The remnant polarization P r and the coercive field E c of the nitrogen‐doped BIT are enhanced relative to those of the undoped BIT (Figure). The leakage current of the nitrogen‐doped BIT decreases and the fatigue properties improves compared to the undoped BIT.