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Towards Protein Field‐Effect Transistors: Report and Model of a Prototype
Author(s) -
Maruccio G.,
Biasco A.,
Visconti P.,
Bramanti A.,
Pompa P. P.,
Calabi F.,
Cingolani R.,
Rinaldi R.,
Corni S.,
Di Felice R.,
Molinari E.,
Verbeet M. P.,
Canters G. W.
Publication year - 2005
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200400628
Subject(s) - mosfet , materials science , field effect transistor , transistor , optoelectronics , semiconductor , oxide , copper , nanotechnology , electrical engineering , voltage , metallurgy , engineering
A protein field‐effect transistor (Pro‐FET) based on the blue‐copper protein azurins (see Figure) and operating at room temperature and ambient pressure is demonstrated. The transfer characteristics of the Pro‐FET exhibit a pronounced resonance due to the switch from behaving as a n‐metal oxide semiconductor FET (n‐MOSFET) to a p‐MOSFET. Carrier transport through the device is explained in terms of an equilibrium between the two possible oxidation states of the redox site (Cu 1+ and Cu 2+ ).