Enhanced Polymer Light‐Emitting Diode Performance Using a Crosslinked‐Network Electron‐Blocking Interlayer | Zendy

Yan H. | Zendy; Scott B. J. | Zendy; Huang Q. | Zendy; Marks T. J. | Zendy

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Enhanced Polymer Light‐Emitting Diode Performance Using a Crosslinked‐Network Electron‐Blocking Interlayer

Author(s) -

Yan H.,

Scott B. J.,

Huang Q.,

Marks T. J.

Publication year - 2004

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200400627

Subject(s) - materials science , diode , optoelectronics , anode , blocking (statistics) , polymer , oled , electron , nanotechnology , electrode , composite material , chemistry , statistics , mathematics , layer (electronics) , physics , quantum mechanics

Effective electron‐blocking layers (EBLs) for multilayer polymer light‐emitting diodes (PLEDs) have been made by placing a crosslinked network of siloxane and hole‐transporting polymers onto PLED anodes. These EBLs resulted in dramatic performance enhancement of conventional, lectron‐dominated PLED devices: the maximum current efficiency increased tenfold to over 17 cd/A, clearly a result of the effectiveness of the EBL.

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