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Enhanced Polymer Light‐Emitting Diode Performance Using a Crosslinked‐Network Electron‐Blocking Interlayer
Author(s) -
Yan H.,
Scott B. J.,
Huang Q.,
Marks T. J.
Publication year - 2004
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200400627
Subject(s) - materials science , diode , optoelectronics , anode , blocking (statistics) , polymer , oled , electron , nanotechnology , electrode , composite material , chemistry , statistics , mathematics , layer (electronics) , physics , quantum mechanics
Effective electron‐blocking layers (EBLs) for multilayer polymer light‐emitting diodes (PLEDs) have been made by placing a crosslinked network of siloxane and hole‐transporting polymers onto PLED anodes. These EBLs resulted in dramatic performance enhancement of conventional, lectron‐dominated PLED devices: the maximum current efficiency increased tenfold to over 17 cd/A, clearly a result of the effectiveness of the EBL.

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