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Reversible 300 K Ferromagnetic Ordering in a Diluted Magnetic Semiconductor
Author(s) -
Schwartz D. A.,
Gamelin D. R.
Publication year - 2004
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200400456
Subject(s) - ferromagnetism , magnetism , magnetic semiconductor , semiconductor , materials science , condensed matter physics , lattice (music) , conductivity , electronics , optoelectronics , physics , chemistry , acoustics
Reversible 300 K ferromagnetic ordering in a diluted magnetic semiconductor, Co 2+ :ZnO, is achieved by lattice incorporation and removal of the native n‐type defect, interstitial Zn, resulting in “off” and “on” states (Figure, red triangles and blue circles). Spectroscopic and magnetic data implicate a double‐exchange mechanism for ferromagnetism. These results suggest new opportunities for integrating magnetism and conductivity in semiconductor sensor or spin‐based electronics devices.