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Observation of Field‐Effect Transistor Behavior at Self‐Organized Interfaces
Author(s) -
Chua L.L.,
Ho P. K. H.,
Sirringhaus H.,
Friend R. H.
Publication year - 2004
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200400392
Subject(s) - materials science , transistor , dielectric , field effect transistor , semiconductor , optoelectronics , conformal map , nanotechnology , voltage , electrical engineering , engineering , mathematical analysis , mathematics
Ultrathin, conformal semiconductor– dielectric bilayers can be fabricated in one step by self‐organization (see Figure), without exposing the critical interface to ambient contamination. Low‐voltage polymer field‐effect transistors using a fluorene–triarylamine copolymer as the p‐channel semiconductor and 40–60 nm thick crosslinked bisbenzocyclobutene derivative as the gate dielectric are shown to be robust and reproducible.