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Fully Transparent ZnO Thin‐Film Transistor Produced at Room Temperature
Author(s) -
Fortunato E. M. C.,
Barquinha P. M. C.,
Pimentel A. C. M. B. G.,
Gonçalves A. M. F.,
Marques A. J. S.,
Pereira L. M. N.,
Martins R. F. P.
Publication year - 2005
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200400368
Subject(s) - materials science , thin film transistor , optoelectronics , transistor , fabrication , sputter deposition , saturation (graph theory) , electronic circuit , voltage , saturation current , threshold voltage , cavity magnetron , thin film , sputtering , nanotechnology , electrical engineering , layer (electronics) , engineering , medicine , alternative medicine , mathematics , pathology , combinatorics
Fully transparent thin‐film transistors (TFTs) are produced at room temperature by radiofrequency magnetron sputtering. Measuring the drain current ( I DS ) as a function of drain voltage ( V DS ) at different gate voltages ( V GS ) shows the TFTs possess “hard saturation” with on‐currents of about 0.2 mA (see Figure) and saturation mobilities of 20 cm 2 V –1 s –1 . The optical and electrical properties and the compatibility of the fabrication process with low‐cost plastic substrates show promise for invisible and flexible electronic circuits.