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Ambipolar Organic Field‐Effect Transistors Based on a Solution‐Processed Methanofullerene
Author(s) -
Anthopoulos T. D.,
Tanase C.,
Setayesh S.,
Meijer E. J.,
Hummelen J. C.,
Blom P. W. M.,
de Leeuw D. M.
Publication year - 2004
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200400309
Subject(s) - ambipolar diffusion , organic field effect transistor , materials science , field effect transistor , transistor , optoelectronics , organic semiconductor , electrode , chemistry , voltage , electrical engineering , physics , plasma , quantum mechanics , engineering
Organic field‐effect transistors (OFETs, see Figure), based on the solution‐ processible methanofullerene [6,6]‐phenyl‐C 61 ‐butyric acid methyl ester (PCBM), have been fabricated in a bottom‐contact device configuration using gold electrodes. The OFET functions either as a p‐ or n‐channel device, depending upon the bias conditions. This is the first example of ambipolar charge transport in FETs based on pristine PCBM.