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Solvothermal Route to Semiconductor Nanowires
Author(s) -
Tang K.B.,
Qian Y.T.,
Zeng J.H.,
Yang X.G.
Publication year - 2003
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200390104
Subject(s) - nanowire , materials science , solvothermal synthesis , nanotechnology , semiconductor , chemical engineering , optoelectronics , engineering
Solvothermal synthesis is an important technology for the preparation of nanowires at low temperature. Nanowires can grow as long as 100 μm with the aid of polymer matrix, and under the pressure generated by solvothermal reactions, the as‐prepared nanowires are well crystallized. For water‐sensitive reactions, solvothermal reactions can fully avoid the presence of water. We discuss here the synthesis of a variety of nanowire structures, including CdS–CdSe core–sheath nanowires and very long CdS nanowires, and the solvothermal closure of PbS nanowires. Now that an appropriate procedure has been established, the solvothermal reactions are efficient and time‐saving.

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