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High‐Quality Ultra‐Fine GaN Nanowires Synthesized Via Chemical Vapor Deposition
Author(s) -
Chen X.,
Xu J.,
Wang R.M.,
Yu D.
Publication year - 2003
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200390097
Subject(s) - materials science , chemical vapor deposition , nanowire , nanotechnology , nanostructure , catalysis , deposition (geology) , semiconductor , chemical engineering , vapor–liquid–solid method , optoelectronics , organic chemistry , paleontology , chemistry , sediment , engineering , biology
GaN nanowires with diameters in the quantum‐confinement size regime (4–10 nm, ∼10 nm in Figure) are prepared on large‐area substrates through catalytic reaction of Ga and NH 3 in a hot‐filament chemical vapor deposition system. The synthetic method is reproducible and could be applied to the growth of other semiconductor nanostructures.