Premium
High‐Quality Ultra‐Fine GaN Nanowires Synthesized Via Chemical Vapor Deposition
Author(s) -
Chen X.,
Xu J.,
Wang R.M.,
Yu D.
Publication year - 2003
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200390097
Subject(s) - materials science , chemical vapor deposition , nanowire , nanotechnology , nanostructure , catalysis , deposition (geology) , semiconductor , chemical engineering , vapor–liquid–solid method , optoelectronics , organic chemistry , paleontology , chemistry , sediment , engineering , biology
GaN nanowires with diameters in the quantum‐confinement size regime (4–10 nm, ∼10 nm in Figure) are prepared on large‐area substrates through catalytic reaction of Ga and NH 3 in a hot‐filament chemical vapor deposition system. The synthetic method is reproducible and could be applied to the growth of other semiconductor nanostructures.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom