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Field‐Effect Transistors Based on Oligothienylenevinylenes: From Solution π‐Dimers to High‐Mobility Organic Semiconductors
Author(s) -
Videlot C.,
Ackermann J.,
Blanchard P.,
Raimundo J.M.,
Frère P.,
Allain M.,
de Bettignies R.,
Levillain E.,
Roncali J.
Publication year - 2003
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200390074
Subject(s) - materials science , organic semiconductor , semiconductor , radical , field effect transistor , conjugated system , transistor , electron mobility , solid state , substitution (logic) , field (mathematics) , chemical physics , polymer , optoelectronics , photochemistry , organic chemistry , chemistry , electrical engineering , voltage , computer science , composite material , programming language , engineering , mathematics , pure mathematics
The substitution pattern of oligothienylenevinylenes (see Figure) exerts a determining effect on the packing arrangement of individual oligomers in the solid state, and thus on field‐effect mobility. These two parameters are tightly correlated to the propensity of the corresponding cation radical to dimerize in solution. The analysis of the π‐dimerization of conjugated cation radicals in solution could be used to screen new candidates for devices.