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GaN Nanorods Doped by Hydride Vapor‐Phase Epitaxy: Optical and Electrical Properties
Author(s) -
Kim H.M.,
Cho Y.H.,
Kang T.W.
Publication year - 2003
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200390053
Subject(s) - nanorod , materials science , doping , epitaxy , hydride , optoelectronics , nanoscopic scale , scanning electron microscope , vapor phase , nanotechnology , transistor , composite material , metal , voltage , layer (electronics) , metallurgy , physics , thermodynamics , quantum mechanics
Exciting opportunities in nanoscale technology could be made available thanks to this first report of doping GaN nanorods to create p‐ and n‐type materials. Controlled doping of the nanorods is achieved by hydride vapor‐phase epitaxy, and they are characterized optically and electrically. The Figure shows a scanning electron microscopy image of a nanorod field‐effect transistor (scale bar is 10 μm)