Premium
Pores in III–V Semiconductors
Author(s) -
Föll H.,
Langa S.,
Carstensen J.,
Christophersen M.,
Tiginyanu I.M.
Publication year - 2003
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200390043
Subject(s) - materials science , nucleation , semiconductor , compound semiconductor , silicon , porous silicon , nanotechnology , hexagonal crystal system , lattice constant , lattice (music) , porosity , optoelectronics , chemical physics , crystallography , epitaxy , composite material , layer (electronics) , optics , chemistry , physics , organic chemistry , diffraction , acoustics
Abstract The paper reviews electrochemically etched pores in III–V compound semiconductors (GaP, InP, GaAs) with emphasis on nucleation and formation mechanisms, pore geometries and morphologies, and to several instances of self‐organization. Self‐ organization issues include the formation of single‐crystalline two‐dimensional hexagonal arrays of pores with lattice constants as small as 100 nm found in InP, synchronized and unsynchronized diameter oscillations coupled to current and voltage oscillations, and pore domain formation. The findings are discussed in relation to pores observed in silicon. Some novel properties of the porous layers obtained in III–V compounds are briefly described.