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Diameter‐Controlled Growth of Single‐Crystalline In 2 O 3 Nanowires and Their Electronic Properties
Author(s) -
Li C.,
Zhang D.,
Han S.,
Liu X.,
Tang T.,
Zhou C.
Publication year - 2003
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200390029
Subject(s) - nanowire , materials science , laser ablation , nanotechnology , lattice (music) , characterization (materials science) , field effect transistor , laser , transistor , optoelectronics , optics , physics , quantum mechanics , voltage , acoustics
Single‐crystalline In 2 O 3 nanowires have been synthesized using a laser ablation approach. Precise control over the nanowire diameter was achieved by using monodispersed gold clusters as the catalyst. Extensive material characterization has been carried out to determine the lattice structure (see Figure) and dimensions of these nanowires. Individual In 2 O 3 nanowires have been utilized to construct field‐effect transistors with on/off ratios up to 1000.