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Epitaxy on Diamond by Chemical Vapor Deposition: A Route to High‐Quality Cubic Boron Nitride for Electronic Applications
Author(s) -
Zhang W.,
Bello I.,
Lifshitz Y.,
Chan K. M.,
Meng X.,
Wu Y.,
Chan C. Y.,
Lee S.T.
Publication year - 2004
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200306658
Subject(s) - diamond , materials science , boron nitride , chemical vapor deposition , epitaxy , material properties of diamond , nanotechnology , boron , layer (electronics) , optoelectronics , chemical engineering , composite material , chemistry , organic chemistry , engineering
Heteroepitaxial growth of cubic boron nitride (cBN) on diamond using fluorine‐assisted chemical vapor deposition is reported. Since cBN grown on diamond shows extraordinary film adhesion and stability, diamond serves as a universal intermediate layer for growing cBN films on a host of materials. The Figure illustrates the heteroepitaxial relationship between the interfacing materials, i.e, cBN–diamond and diamond–silicon.