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Er/Yb Doped Porous Silicon—A Novel White Light Source
Author(s) -
Luo L.,
Zhang X. X.,
Li K. F.,
Cheah K. W.,
Shi J. X.,
Wong W. K.,
Gong M. L.
Publication year - 2004
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200306609
Subject(s) - materials science , ytterbium , erbium , doping , porous silicon , silicon , optoelectronics , excited state , porosity , laser , optics , composite material , atomic physics , physics
A constant voltage electrochemical doping method , is used in order to successfully introduce elemental erbium, Er and ytterbium, Yb into the pores of porous silicon. Er/Yb doped porous silicon emits efficiently from the UV to near‐IR when excited with a 980 nm line laser (see Figure).
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