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Low‐Temperature Growth of Well‐Aligned β‐Ga 2 O 3 Nanowires from a Single‐Source Organometallic Precursor
Author(s) -
Chang K.W.,
Wu J.J.
Publication year - 2004
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200306299
The growth of well‐aligned Ga 2 O 3 nanowires at low temperature (550 °C) is reported (see Figure). A single‐source precursor of gallium acetylacetonate is employed as the reactant for the growth of the nanowires by a vapor–liquid–solid route. Structural characterization by X‐ray diffraction and transmission electron microscopy reveals that the nanowires are preferentially oriented in the (2?01) direction.