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All‐Organic Permanent Memory Transistor Using an Amorphous, Spin‐Cast Ferroelectric‐like Gate Insulator
Author(s) -
Schroeder R.,
Majewski L. A.,
Grell M.
Publication year - 2004
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200306187
Subject(s) - materials science , ferroelectricity , transistor , optoelectronics , insulator (electricity) , hysteresis , amorphous solid , non volatile memory , thin film transistor , organic electronics , electronics , nanotechnology , electrical engineering , voltage , condensed matter physics , crystallography , chemistry , physics , layer (electronics) , dielectric , engineering
An all‐organic memory transistor (“FerrOFET”) with a solution‐ deposited ferroelectric‐like nylon gate insulator is demonstrated. Cheaper and easier to build than inorganic ferroelectric transistors, yet with comparable performance and compatible with flexible substrates, this device is suitable for most information storage organic electronics applications. The Figure shows the memory function of the FerrOFET as hysteresis in the transfer characteristics.