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SiC–SiO 2 –C Coaxial Nanocables and Chains of Carbon Nanotube–SiC Heterojunctions
Author(s) -
Li Y.,
Bando Y.,
Golberg D.
Publication year - 2004
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200306117
Subject(s) - materials science , coaxial , heterojunction , carbon nanotube , nanotechnology , chemical vapor deposition , nanostructure , nanotube , annealing (glass) , nanoscopic scale , amorphous solid , chemical engineering , carbon nanotube field effect transistor , optoelectronics , composite material , transistor , field effect transistor , organic chemistry , chemistry , physics , engineering , quantum mechanics , voltage , electrical engineering
Coaxial nanocables composed of a uniform single‐crystalline β‐SiC core, an amorphous SiO 2 intermediate layer, and a graphitic carbon sheath (see Figure) have been synthesized via a simple chemical vapor deposition route. By annealing the nanocables, chains of carbon nanotube–SiC heterojunctions have been prepared. These nanostructures are suggested to be highly valuable as building blocks for nanoscale electronic devices.