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Vapor–Liquid–Solid Growth of Silicon–Germanium Nanowires
Author(s) -
Lew K.K.,
Pan L.,
Dickey E.C.,
Redwing J.M.
Publication year - 2003
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200306035
Subject(s) - nanowire , materials science , germanium , germane , silane , vapor–liquid–solid method , alloy , homogeneous , silicon , coating , chemical vapor deposition , chemical engineering , nanotechnology , optoelectronics , metallurgy , composite material , thermodynamics , physics , engineering
SiGe alloy nanowires (see Figure) have been fabricated using vapor–liquid–solid (VLS) growth with silane (SiH 4 ) and germane (GeH 4 ) gas sources. Growth conditions have been identified that produce nanowires with homogeneous alloy composition with negligible Ge coating on the wire surface. The Ge composition in the nanowire can be controlled by varying the inlet GeH 4 /(GeH 4 + SiH 4 ) gas ratio.