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Transparent Organic Thin‐Film Transistor with a Laterally Grown Non‐Planar Phthalocyanine Channel
Author(s) -
Ohta H.,
Kambayashi T.,
Nomura K.,
Hirano M.,
Ishikawa K.,
Takezoe H.,
Hosono H.
Publication year - 2004
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200306015
Subject(s) - materials science , thin film transistor , optoelectronics , transistor , planar , phthalocyanine , organic field effect transistor , indium tin oxide , thin film , organic semiconductor , gate dielectric , dielectric , nanotechnology , field effect transistor , layer (electronics) , electrical engineering , computer graphics (images) , engineering , voltage , computer science
An improved‐performance transparent organic thin‐film transistor (OTFT) is described, which has a vanadyl‐phthalocyanine (VOPc) film as an active p‐channel, lattice‐matched (Sc 0.7 Y 0.3 ) 2 O 3 film as a high‐ k gate dielectric, and atomically flat indium tin oxide (ITO) film as the bottom contact (see Figure). These features—lattice matching and atomic flatness—are expected to lead to further improvements in transparent OTFTs.