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Solution‐based Fabrication of High‐κ Gate Dielectrics for Next‐Generation Metal‐Oxide Semiconductor Transistors
Author(s) -
Aoki Y.,
Kunitake T.
Publication year - 2004
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200305731
Subject(s) - materials science , fabrication , dielectric , high κ dielectric , annealing (glass) , oxide , semiconductor , atomic layer deposition , chemical vapor deposition , optoelectronics , gate dielectric , metal , layer (electronics) , transistor , nanotechnology , chemical engineering , composite material , metallurgy , electrical engineering , engineering , pathology , voltage , medicine , alternative medicine
The layer‐by‐layer adsorption of precursor metal alkoxides in solution and post‐annealing at 400 °C affords an alternate technique to the atomic layer chemical vapour deposition method for fabrication of next‐generation high‐κ gate dielectrics. A void‐free TiO 2 –La 2 O 3 composite film (see Figure) with 18 nm thickness is readily fabricated, and shows a dielectric constant higher than 30.