Premium
Solution‐based Fabrication of High‐κ Gate Dielectrics for Next‐Generation Metal‐Oxide Semiconductor Transistors
Author(s) -
Aoki Y.,
Kunitake T.
Publication year - 2004
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200305731
Subject(s) - materials science , fabrication , dielectric , high κ dielectric , annealing (glass) , oxide , semiconductor , atomic layer deposition , chemical vapor deposition , optoelectronics , gate dielectric , metal , layer (electronics) , transistor , nanotechnology , chemical engineering , composite material , metallurgy , electrical engineering , engineering , pathology , voltage , medicine , alternative medicine
The layer‐by‐layer adsorption of precursor metal alkoxides in solution and post‐annealing at 400 °C affords an alternate technique to the atomic layer chemical vapour deposition method for fabrication of next‐generation high‐κ gate dielectrics. A void‐free TiO 2 –La 2 O 3 composite film (see Figure) with 18 nm thickness is readily fabricated, and shows a dielectric constant higher than 30.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom