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Multibit Memory Using Self‐Assembly of Mixed Ferrocene/Porphyrin Monolayers on Silicon
Author(s) -
Li Q.,
Mathur G.,
Gowda S.,
Surthi S.,
Zhao Q.,
Yu L.,
Lindsey J. S.,
Bocian D. F.,
Misra V.
Publication year - 2004
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200305680
Subject(s) - monolayer , ferrocene , porphyrin , materials science , cationic polymerization , silicon , self assembly , benzyl alcohol , cyclic voltammetry , capacitance , conductance , self assembled monolayer , nanotechnology , molecule , chemical engineering , photochemistry , electrochemistry , optoelectronics , organic chemistry , polymer chemistry , electrode , catalysis , chemistry , condensed matter physics , physics , engineering
An alternative strategy for achieving multi‐bit functionality , which uses mixed self‐assembled monolayers of a benzyl alcohol‐tethered ferrocene (Fc‐BzOH) and a benzyl alcohol‐tethered porphyrin (Por‐BzOH) on silicon surfaces to achieve a four‐state (2‐bit) memory element, is presented. The four states include the neutral state and three distinct cationic states obtained upon oxidation of Fc‐BzOH (monopositive) and Por‐BzOH (monopositive, dipositive) molecules. Conventional cyclic voltammetry, capacitance, and conductance methods have been used to characterize the mixed monolayer.