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Solution‐Processed Organic n‐Type Thin‐Film Transistors
Author(s) -
Waldauf C.,
Schilinsky P.,
Perisutti M.,
Hauch J.,
Brabec C.J.
Publication year - 2003
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200305623
Subject(s) - materials science , active layer , transistor , thin film transistor , layer (electronics) , electron mobility , optoelectronics , analytical chemistry (journal) , chemical engineering , nanotechnology , organic chemistry , electrical engineering , chemistry , engineering , voltage
An organic n‐type transistor , where both insulating and active layer were processed from solution, has been produced. As the active layer the C 60 ‐derivative, [6,6]‐phenyl C 61 ‐butyric acid methyl ester (PCBM), was used. Its electron mobility was determined to be as high as μ e = 4.5 × 10 –3 cm 2 V –1 s –1 when calcium drain/source contacts were used. If these contacts are formed from more air‐stable metals, the device performance decreases.