z-logo
Premium
High Electron Mobility and Ambipolar Transport in Organic Thin‐Film Transistors Based on a π‐Stacking Quinoidal Terthiophene
Author(s) -
Chesterfield R.J.,
Newman C.R.,
Pappenfus T.M.,
Ewbank P.C.,
Haukaas M.H.,
Mann K.R.,
Miller L.L.,
Frisbie C.D.
Publication year - 2003
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200305200
Subject(s) - ambipolar diffusion , thin film transistor , materials science , organic semiconductor , stacking , transistor , electron mobility , optoelectronics , semiconductor , organic field effect transistor , terthiophene , thermal conduction , electron , polymer , field effect transistor , nanotechnology , organic chemistry , layer (electronics) , electrical engineering , chemistry , composite material , physics , engineering , voltage , quantum mechanics
Thin‐film transistors (TFTs) based on a new n‐channel organic semiconductor (DCMT; see Figure) are reported. An electron mobility as high as 0.2 cm 2 /V s was observed, as well as ambipolar TFT behavior. Variable temperature measurements reveal that electron conduction is activated, with a small activation energy of 35 ± 10 meV. These results demonstrate that quinoidal oligothiophenes are a promising new class of organic semiconductors for TFTs.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom