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High Electron Mobility and Ambipolar Transport in Organic Thin‐Film Transistors Based on a π‐Stacking Quinoidal Terthiophene
Author(s) -
Chesterfield R.J.,
Newman C.R.,
Pappenfus T.M.,
Ewbank P.C.,
Haukaas M.H.,
Mann K.R.,
Miller L.L.,
Frisbie C.D.
Publication year - 2003
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200305200
Subject(s) - ambipolar diffusion , thin film transistor , materials science , organic semiconductor , stacking , transistor , electron mobility , optoelectronics , semiconductor , organic field effect transistor , terthiophene , thermal conduction , electron , polymer , field effect transistor , nanotechnology , organic chemistry , layer (electronics) , electrical engineering , chemistry , composite material , physics , engineering , voltage , quantum mechanics
Thin‐film transistors (TFTs) based on a new n‐channel organic semiconductor (DCMT; see Figure) are reported. An electron mobility as high as 0.2 cm 2 /V s was observed, as well as ambipolar TFT behavior. Variable temperature measurements reveal that electron conduction is activated, with a small activation energy of 35 ± 10 meV. These results demonstrate that quinoidal oligothiophenes are a promising new class of organic semiconductors for TFTs.