KSb 5 S 8 : A Wide Bandgap Phase‐Change Material for Ultra High Density Rewritable Information Storage | Zendy

Kyratsi T. | Zendy; Chrissafis K. | Zendy; Wachter J. | Zendy; Paraskevopoulos K.M. | Zendy; Kanatzidis M.G. | Zendy

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KSb 5 S 8 : A Wide Bandgap Phase‐Change Material for Ultra High Density Rewritable Information Storage

Author(s) -

Kyratsi T.,

Chrissafis K.,

Wachter J.,

Paraskevopoulos K.M.,

Kanatzidis M.G.

Publication year - 2003

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200304994

Subject(s) - materials science , band gap , stoichiometry , crystallization , phase (matter) , kinetic energy , crystal (programming language) , crystallography , optoelectronics , thermodynamics , chemistry , computer science , physics , organic chemistry , quantum mechanics , programming language

A well defined, congruently melting stoichiometric system , KSb 5 S 8 (see Figure), with a wide optical energy gap that undergoes rapid reversible crystal–glass transformation is described. The activation energy of crystallization E c was calculated to be ∼ 167 kJ mol –1 . The kinetic parameters and energy bandgaps of KSb 5 S 8 suggest a new inexpensive phase‐change material for possible ultra high density data storage applications.

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