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A p‐Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes
Author(s) -
Narushima S.,
Mizoguchi H.,
Shimizu K.,
Ueda K.,
Ohta H.,
Hirano M.,
Kamiya T.,
Hosono H.
Publication year - 2003
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200304947
Subject(s) - materials science , heterojunction , fabrication , amorphous solid , diode , semiconductor , oxide , optoelectronics , thin film , nanotechnology , metallurgy , crystallography , medicine , chemistry , alternative medicine , pathology
Oxide electronics , which together with amorphous semiconductors could become a rapid‐growth field, have come a step closer with the first report of a p‐type amorphous oxide semiconductor, ZnO·Rh 2 O 3 . The thin‐film deposition of this material at room temperature and the fabrication of p–n heterojunction diodes on flexible plastic sheets (see Figure) are demonstrated.