Tetramethylpentacene: Remarkable Absence of Steric Effect on Field Effect Mobility | Zendy

Meng H. | Zendy; Bendikov M. | Zendy; Mitchell G. | Zendy; Helgeson R. | Zendy; Wudl F. | Zendy; Bao Z. | Zendy; Siegrist T. | Zendy; Kloc C. | Zendy; Chen C.H. | Zendy

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Tetramethylpentacene: Remarkable Absence of Steric Effect on Field Effect Mobility

Author(s) -

Meng H.,

Bendikov M.,

Mitchell G.,

Helgeson R.,

Wudl F.,

Bao Z.,

Siegrist T.,

Kloc C.,

Chen C.H.

Publication year - 2003

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200304935

Subject(s) - pentacene , materials science , steric effects , substrate (aquarium) , field effect transistor , organic field effect transistor , electron mobility , transistor , optoelectronics , deposition (geology) , field effect , nanotechnology , thin film transistor , analytical chemistry (journal) , stereochemistry , organic chemistry , electrical engineering , voltage , chemistry , paleontology , oceanography , engineering , layer (electronics) , sediment , geology , biology

A new pentacene derivative , 2,3,9,10‐tetramethyl‐pentacene (Me 4 PENT), has been synthesized, characterized, and tested in a field‐effect transistor (FET) device (see Figure). A bottom‐contact‐mode FET device fabricated with Me 4 PENT was shown to exhibit a high charge‐transport mobility of 0.31 cm 2 V –1 s –1 when fabricated at a deposition substrate temperature of 85 °C.

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