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Tetramethylpentacene: Remarkable Absence of Steric Effect on Field Effect Mobility
Author(s) -
Meng H.,
Bendikov M.,
Mitchell G.,
Helgeson R.,
Wudl F.,
Bao Z.,
Siegrist T.,
Kloc C.,
Chen C.H.
Publication year - 2003
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200304935
Subject(s) - pentacene , materials science , steric effects , substrate (aquarium) , field effect transistor , organic field effect transistor , electron mobility , transistor , optoelectronics , deposition (geology) , field effect , nanotechnology , thin film transistor , analytical chemistry (journal) , stereochemistry , organic chemistry , electrical engineering , voltage , chemistry , paleontology , oceanography , engineering , layer (electronics) , sediment , geology , biology
A new pentacene derivative , 2,3,9,10‐tetramethyl‐pentacene (Me 4 PENT), has been synthesized, characterized, and tested in a field‐effect transistor (FET) device (see Figure). A bottom‐contact‐mode FET device fabricated with Me 4 PENT was shown to exhibit a high charge‐transport mobility of 0.31 cm 2 V –1 s –1 when fabricated at a deposition substrate temperature of 85 °C.