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Submicrometer Functionalization of Porous Silicon by Electron Beam Lithography
Author(s) -
Rocchia M.,
Borini S.,
Rossi A.M.,
Boarino L.,
Amato G.
Publication year - 2003
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200304919
Subject(s) - surface modification , materials science , electron beam lithography , lithography , silicon , porous silicon , nanotechnology , irradiation , porosity , resist , desorption , electron beam processing , chemical engineering , optoelectronics , adsorption , composite material , organic chemistry , chemistry , layer (electronics) , physics , engineering , nuclear physics
Functionalization of porous silicon (PS) by an innovative method based on electron beam (EB) irradiation is reported. It is shown that EB irradiation induces hydrogen desorption from PS, leaving a very reactive surface, and that this PS surface undergoes local modification when treated with unsaturated hydrocarbons immediately after EB exposure. Finally, the authors demonstrate that different molecules can be attached to the same chip in different regions with the resolution typical of EB lithography, i.e., submicrometer patterning is possible.