Submicrometer Functionalization of Porous Silicon by Electron Beam Lithography

Functionalization of porous silicon (PS) by an innovative method based on electron beam (EB) irradiation is reported. It is shown that EB irradiation induces hydrogen desorption from PS, leaving a very reactive surface, and that this PS surface undergoes local modification when treated with unsaturated hydrocarbons immediately after EB exposure. Finally, the authors demonstrate that different molecules can be attached to the same chip in different regions with the resolution typical of EB lithography, i.e., submicrometer patterning is possible.