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Photonic Band Engineering in Opals by Growth of Si/Ge Multilayer Shells
Author(s) -
GarcíaSantamaría F.,
Ibisate M.,
Rodríguez I.,
Meseguer F.,
López C.
Publication year - 2003
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200304866
Subject(s) - materials science , photonics , germanium , fabrication , photonic crystal , chemical vapor deposition , silicon , optoelectronics , semiconductor , dispersion (optics) , nanotechnology , optics , medicine , alternative medicine , physics , pathology
Engineering the shape of photonic bands is a desirable aim to study anomalous dispersion effects or gap formation. Accurate control of silicon and germanium growth by chemical vapor deposition within thin silica opals is reported here. Alternate layers of the two semiconductors—which can be selectively removed (see Figure)—allows new freedom in the fabrication of photonic crystals (see also cover).