Direction‐Selective and Length‐Tunable In‐Plane Growth of Carbon Nanotubes | Zendy

Cao A. | Zendy; Baskaran R. | Zendy; Frederick M.J. | Zendy; Turner K. | Zendy; Ajayan P.M. | Zendy; Ramanath G. | Zendy

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Direction‐Selective and Length‐Tunable In‐Plane Growth of Carbon Nanotubes

Author(s) -

Cao A.,

Baskaran R.,

Frederick M.J.,

Turner K.,

Ajayan P.M.,

Ramanath G.

Publication year - 2003

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200304738

Subject(s) - carbon nanotube , materials science , microelectronics , chemical vapor deposition , nanotechnology , electrode , nanotube , carbon nanotube actuators , deposition (geology) , potential applications of carbon nanotubes , cover (algebra) , carbon nanotube quantum dot , optoelectronics , plane (geometry) , optical properties of carbon nanotubes , mechanical engineering , paleontology , chemistry , geometry , mathematics , sediment , engineering , biology

Chemical vapor deposition on selectively masked SiO 2 patterns has been used to obtain controlled placement and exclusive in‐plane growth of length‐ and direction‐tunable carbon nanotubes (see Figure and inside cover). Nanotube bridges interconnecting SiO 2 patterns are fabricated, and their electrical characteristics are demonstrated. This approach holds promise for manufacturing large‐scale microelectronic systems integrated with nanotube–electrode units.

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