Nanoscale Ultraviolet‐Light‐Emitting Diodes Using Wide‐Bandgap Gallium Nitride Nanorods | Zendy

Kim H.M. | Zendy; Kang T.W. | Zendy; Chung K.S. | Zendy

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Nanoscale Ultraviolet‐Light‐Emitting Diodes Using Wide‐Bandgap Gallium Nitride Nanorods

Author(s) -

Kim H.M.,

Kang T.W.,

Chung K.S.

Publication year - 2003

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200304554

Subject(s) - materials science , nanorod , optoelectronics , gallium nitride , light emitting diode , heterojunction , diode , band gap , gallium phosphide , epitaxy , ultraviolet , nanoscopic scale , wide bandgap semiconductor , luminescence , fabrication , nanotechnology , layer (electronics) , medicine , alternative medicine , pathology

The fabrication of p–n junctions in individual GaN nanorods has been realized using hydride vapor phase epitaxy. Application of the resulting heterostructures as wide bandgap current rectifiers with a high breakdown voltage and for near UV light‐emitting diodes is demonstrated. The Figure is a luminescence image of the light emitted from a forward‐biased nanorod p–n junction at 3 V.

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