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Nanoscale Ultraviolet‐Light‐Emitting Diodes Using Wide‐Bandgap Gallium Nitride Nanorods
Author(s) -
Kim H.M.,
Kang T.W.,
Chung K.S.
Publication year - 2003
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200304554
Subject(s) - materials science , nanorod , optoelectronics , gallium nitride , light emitting diode , heterojunction , diode , band gap , gallium phosphide , epitaxy , ultraviolet , nanoscopic scale , wide bandgap semiconductor , luminescence , fabrication , nanotechnology , layer (electronics) , medicine , alternative medicine , pathology
The fabrication of p–n junctions in individual GaN nanorods has been realized using hydride vapor phase epitaxy. Application of the resulting heterostructures as wide bandgap current rectifiers with a high breakdown voltage and for near UV light‐emitting diodes is demonstrated. The Figure is a luminescence image of the light emitted from a forward‐biased nanorod p–n junction at 3 V.