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High Permittivity from Defective Multiwalled Carbon Nanotubes in the X‐Band
Author(s) -
Watts P.C.P.,
Hsu W.K.,
Barnes A.,
Chambers B.
Publication year - 2003
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200304485
Subject(s) - materials science , permittivity , carbon nanotube , dielectric , relative permittivity , supercapacitor , doping , dielectric permittivity , composite material , nanotechnology , optoelectronics , capacitance , electrode , chemistry
Defective multiwalled carbon nanotubes display higher real permittivity than graphitic carbon nanotubes (CNTs). That is the conclusion of the study presented here in which the permittivity of Fe‐filled and boron‐doped CNTs in the X‐band is compared with that of graphitic CNTs made by arc discharge. However, the imaginary parts of the permittivity are still very low in all three cases. This finding indicates that defective CNTs are excellent dielectric materials and can be used as supercapacitor components, i.e., high‐energy storage systems.