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Growth Direction and Cross‐Sectional Study of Silicon Nanowires
Author(s) -
Li C.P.,
Lee C.S.,
Ma X.L.,
Wang N.,
Zhang R.Q.,
Lee S.T.
Publication year - 2003
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200304409
Subject(s) - materials science , nanowire , transmission electron microscopy , silicon , silicon nanowires , cross section (physics) , enhanced data rates for gsm evolution , nanotechnology , crystallography , condensed matter physics , optoelectronics , physics , chemistry , telecommunications , quantum mechanics , computer science
Cross‐sectional samples of silicon nanowires (SiNWs) are examined using transmission electron microscopy. The cross‐sections are bounded by well‐defined low‐index crystallographic facets of various shapes (e.g., the square section in the Figure, 50 nm edge) and characterized by shape‐dependent growth directions, with 〈112〉 and 〈110〉 predominating. Both shape and growth direction are consistent with surface energy considerations and growth mechanisms.