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Modification of Electronic Structures of a Carbon Nanotube by Hydrogen Functionalization
Author(s) -
Kim K.S.,
Bae D.J.,
Kim J.R.,
Park K.A.,
Lim S.C.,
Kim J.J.,
Choi W.B.,
Park C.Y.,
Lee Y.H.
Publication year - 2002
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200290008
Subject(s) - materials science , carbon nanotube , surface modification , nanotube , nanotechnology , carbon nanotube quantum dot , silicon , oxide , intramolecular force , carbon nanotube field effect transistor , carbon nanotube actuators , atomic layer deposition , hydrogen , selective chemistry of single walled nanotubes , chemical engineering , thin film , optical properties of carbon nanotubes , optoelectronics , transistor , field effect transistor , organic chemistry , voltage , chemistry , physics , quantum mechanics , engineering , metallurgy
A rigorous method to engineer the electronic structure of carbon nanotubes from metallic to semiconducting is reported (see inside front cover). An intramolecular junction in carbon nanotube is fabricated, where half of the nanotube is masked by a silicon oxide thin film. Functionalization of the nanotube by atomic hydrogen leads to the formation of an intramolecular junction, resulting in clear rectifying behavior at room temperature. This represents an important step towards the practical realization of nanotube‐based nanotransistors.