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Self‐Organized Quantum Wires and Dots in III – V semiconductors
Author(s) -
Asahi Hajime
Publication year - 1997
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19970091305
Subject(s) - quantum dot , materials science , stacking , semiconductor , fabrication , layer (electronics) , condensed matter physics , self assembly , quantum , nanotechnology , modulation (music) , optoelectronics , quantum wire , physics , quantum mechanics , nuclear magnetic resonance , medicine , alternative medicine , pathology , acoustics
The fabrication of quantum wires and quantum dots in III–V semiconductors using self‐organization phenomena is reviewed. The Stranski–Krastanov (S‐K) mode growth, step‐bunching, and strain‐induced lateral composition modulation techniques are covered. The Figure shows the vertical stacking of islands that are formed by the alternate S‐K mode growth of five cycles of an In(Ga) quantum dot layer and a GaAs spacer layer.