Self‐Organized Quantum Wires and Dots in III – V semiconductors

The fabrication of quantum wires and quantum dots in III–V semiconductors using self‐organization phenomena is reviewed. The Stranski–Krastanov (S‐K) mode growth, step‐bunching, and strain‐induced lateral composition modulation techniques are covered. The Figure shows the vertical stacking of islands that are formed by the alternate S‐K mode growth of five cycles of an In(Ga) quantum dot layer and a GaAs spacer layer.