Premium
Improved field‐effect mobility in short oligothiophenes: Quaterthiophene and quinquethiophene
Author(s) -
Hajlaoui Riadh,
Horowitz Gilles,
Garnier Francis,
ArceBrouchet Alexandre,
Laigre Laurent,
Kassmi Ahmed El,
Demanze Frédéric,
Kouki Fayçal
Publication year - 1997
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19970090504
Subject(s) - materials science , charge (physics) , field effect transistor , electron mobility , optoelectronics , acceptor , transistor , organic electronics , electron acceptor , field effect , chemical physics , nanotechnology , field (mathematics) , photochemistry , condensed matter physics , electrical engineering , voltage , chemistry , physics , quantum mechanics , engineering , mathematics , pure mathematics
Organic field effect transistors (OFETs) made from quaterthiophene (4T) and quinquethiophene (5T) have been fabricated with greatly enhanced field‐effect mobilities. It is shown that the problem seems to lie in achieving efficient charge injection rather than in poor charge transport within the material. Dopping of the drain and source contacts with a thin layer of the electron acceptor TCNQ is demonstrated to improve charge injection in 4T devices. Other factors affecting performance are considered briefly.