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Demonstration of a nanolithographic technique using a self‐assembled monolayer resist for neutral atomic cesium
Author(s) -
Prentiss Mara,
Berggren Karl K.,
Younkin Rebecca,
Cheung Eunice,
Tinkham Michael,
Ralph Daniel C.,
Black Charles T.,
Whitesides George M.,
Black Andrew J.
Publication year - 1997
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19970090111
Subject(s) - resist , caesium , materials science , lithography , monolayer , silicon , nanostructure , nanotechnology , electron beam lithography , atom (system on chip) , nanolithography , atomic beam , energetic neutral atom , optoelectronics , fabrication , beam (structure) , optics , layer (electronics) , ion , inorganic chemistry , chemistry , alternative medicine , physics , organic chemistry , pathology , computer science , embedded system , medicine
A new lithographic method of making nanostructures is demonstrated in which a patterned beam of neutral cesium atoms is used to damage a ∼1.2‐nm‐thick self‐assembled monolayer resist of alkanethiolates on gold. The attractive features of cesium for atomic lithography and the current techniques for neutral atom lithography are sketched. The method is detailed and investigations of the damage to the surface are described. This can be viewed as a first step towards fabricating nanostructures in silicon using optically patterned neutral atomic beams.