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Imaging the structure of the p‐n junction in polymer light‐emitting electrochemical cells
Author(s) -
Dick David J.,
Heeger Alan J.,
Yang Yang,
Pei Qibing
Publication year - 1996
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19960081208
Subject(s) - electroluminescence , materials science , doping , electrochemical cell , optoelectronics , electrochemistry , p–n junction , polymer , light emission , semiconductor , nanotechnology , electrode , composite material , chemistry , layer (electronics)
Light‐emitting electrochemical cells (LECs) offer a new approach to light‐emitting devices fabricated from semiconducting polymers. The p‐n junction formed in situ in an LEC through electrochemical doping has been imaged in the surface cell configuration by measuring the doping profile, the electric field profile within the junction, and the electroluminescence emission profile. The methods used are described and the results interpreted to provide a detailed picture of the structure of the p‐n junction.