Premium
Molecular orbital energy level engineering in organic transistors
Author(s) -
Dodabalapur Ananth,
Katz Howard E.,
Torsi Luisa
Publication year - 1996
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19960081021
Subject(s) - heterojunction , materials science , transistor , optoelectronics , field effect transistor , sign (mathematics) , organic semiconductor , nanotechnology , electrical engineering , voltage , engineering , mathematical analysis , mathematics
The application of heterostructure concepts to organic field effects transistors (FETs) is briefly reviewed. In particular, the physics of operation of α‐sexithiophene‐ and C 60 ‐based FETs—which can act as p‐ or n‐channel transistors depending on the sign and magnitude of the gate bias—and of isotype heterostructure FETs is outlined. In the latter, both active materials, e.g., an aromatic diamine and α‐sexithiophene, transport the same (majority) carrier type.