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Epitaxial size control by mismatch tuning in electrodeposited Cd(Se, Te) quantum dots on {111} gold
Author(s) -
Golan Yuval,
Hutchison John L.,
Rubinstein Israel,
Hodes Gary
Publication year - 1996
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19960080804
Subject(s) - materials science , quantum dot , epitaxy , substrate (aquarium) , optoelectronics , semiconductor , layer (electronics) , band gap , nanotechnology , oceanography , geology
Since the crystal size of semiconductor quantum dots (QDs) affects the optoelectronic properties of QDs, a method of controlling the size is important. It is demonstrated that CdSe QDs electrodeposited epitaxially on {111} Au can be tuned from <5 to ∼ 20 nm by introducing small amounts of Te into the electrodeposited CdSe, i.e., by decreasing the mismatch between the deposited layer and the substrate. A further advantage of this technique is the ability to vary the bandgap continuously and controllably.