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InGaAlN and II–VI Systems for Blue–Green Light‐Emitting Devices
Author(s) -
Matsuoka Takashi
Publication year - 1996
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19960080603
Subject(s) - metalorganic vapour phase epitaxy , materials science , molecular beam epitaxy , epitaxy , optoelectronics , blue light , nanotechnology , vapor phase , physics , layer (electronics) , thermodynamics
Recent progress in research on InGaAlN and II–VI systems has been remarkable, and this paper reviews the properties of these materials from the viewpoint of making reliable light‐emitting devices. The growth of these materials by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE) is also reviewed, and the current status of both materials is reviewed with respect to light‐emitting devices.