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Single crystal ß‐Si 3 N 4 fibers obtained by self‐propagating high temperature synthesis **
Author(s) -
Rodriguez Miguel A.,
Makhonin Nikolay S.,
Escriña Juan A.,
Borovinskava Inna P.,
Osendi María I.,
Barba Maria F.,
Iglesias Juan E.,
Moya José S.
Publication year - 1995
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19950070815
Subject(s) - materials science , silicon nitride , crystal (programming language) , silicon , nitride , single crystal , optoelectronics , composite material , crystallography , computer science , chemistry , layer (electronics) , programming language
The growth of single crystal β‐silicon nitride fibers (see Figure) several millimeters long through the application of self‐propagating high‐temperature synthesis is demonstrated. Advantages include the igh purity of the fibers obtained, the fact that the fibers are stable up to 2000°C, and the low cost of the SHS process.